Available Options
The 818-BB-35 High Speed InGaAs Detector consists of a free-space 1000 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC connector output. It is a low-cost solution for ultra-fast measurements up to a 15 GHz bandwidth. This detectors are suitable for applications where detector rise time of <25 psec are required for Q-switched and Ultrafast Laser output analysis. The batteries are easily replaceable and by disconnecting the detector from the oscilloscope input, when not in use, you can extend the lifetime of the batteries. 818-BB Series Biased Photodiode Detectors are cost effective diagnostic tools suitable for a variety of high speed applications such as viewing of Q-switched, mode-locked, or rapidly modulated laser signals and picosecond laser alignment.
NOTE-These detectors are very susceptible to damage by electrostatic discharge (ESD). Please use ESD protective measures, like the FK-STRAP, when unpacking and handling these devices.
feature | |
3 dB Bandwidth | DC to 15 GHz |
Acceptance Angle | 30° |
Amplified | No |
Bias Voltage | 6 V |
Cut-off Frequency | >15 GHz |
Dark Current | <3 nA |
Detector Diameter | 0.032 mm |
Detector Material | InGaAs |
Detector Type | PIN |
Fall Time | <25 ps |
Junction Capacitance | <0.12 pF |
NEP | <0.04 pW/√Hz |
Optical Input | Free Space |
Output Connector | SMA |
Responsivity | 0.88 A/W @ 1550 nm |
Reverse Breakdown | 25 V |
Rise Time | 25 ps |
Saturation Current | 10 mA |
Thread Type | 8-32 and M4 |
Wavelength Range | 1000-1650 nm |