High Speed Photodetector, 830-2150 nm Battery Biased Extended InGaAs Detector, 12.5 GHz
$961.00
Ex Tax: $961.00
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The 818-BB-51 High Speed InGaAs Detector is built from a free-space extended InGaAs photodiode with a 40 um active diameter and a fast <28 ps rise time. With the wavelength range of 830 - 2150 nm, it allows monitoring Thulium (Tm) and Holmium (Ho) doped lasers as well as other NIR lasers. It includes a built-in battery-powered 3V bias, an on-off switch and an SMA connector output. The batteries are easily replaceable and by disconnecting the detector from the oscilloscope input, when not in use, you can extend the lifetime of the batteries. It replaces the obsolete Model 818-BB-50.
feature | |
3 dB Bandwidth | DC to 12.5 GHz |
Acceptance Angle | 20° |
Amplified | No |
Bias Voltage | 3 V |
Cut-off Frequency | >12.5 GHz |
Dark Current | <1 u A |
Detector Diameter | 0.040 mm |
Detector Material | Extended InGaAs |
Detector Type | PIN |
Fall Time | <28 ps |
NEP | <0.44 pW/√Hz @ 2000 nm |
Optical Input | Free Space |
Output Connector | SMA |
Responsivity | 1.3 A/W @ 2.0 µm |
Rise Time | 28 ps |
Thread Type | 8-32 and M4 |
Wavelength Range | 830-2150 nm |